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Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Negative-differential-resistance effects in TlInTe2 ternary semiconductor
Negative-differential-resistance effects in TlInTe2 ternary semiconductor
Subject
:
Physics
Document Language
:
English
Abstract
:
Thallium indium ditelluride single crystals, were prepared by a special high efficiency, low cost, design, constructed locally, based on Bridgman technique. A special prespex sample holder and quartz cryostat were used to investigate the switching phenomena in TlInTe2 single crystal. Current-controlled negative resistance (CCNR) has been observed for the first time. The switching effect observed in such crystal shows memory. The current-voltage (i - v) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative-differential-resistance (NDR) region at higher current densities. This behavior has been explained by an electrothermal model. The results strongly indicate that the phenomenon in our sample is very sensitive to temperature, light intensity and sample thickness as well. Switching parameters (ith, vth, ih, vh, Pth and ROFF/RON) are found to depend on the surrounding conditions as well as the sample thickness. © 2009 Elsevier B.V. All rights reserved.
ISSN
:
0925-8388
Journal Name
:
Journal of Alloys and Compounds
Volume
:
484
Issue Number
:
1-2
Publishing Year
:
2009 AH
2009 AD
Article Type
:
Article
Added Date
:
Monday, October 12, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
أحمد عبدالله الغامدي
AL-GHAMDI, A A
Researcher
Doctorate
AGAMDI@kau.edu.sa
فرج سعيد الحازمي
AL-HAZMI, F S
Researcher
Doctorate
Falhazmi@kau.edu.sa
Files
File Name
Type
Description
25006.pdf
pdf
Abstract
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