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Document Details
Document Type
:
Article In Journal
Document Title
:
Thermoelectric power (TEP) of layered chalcogenides GaTe crystals
Thermoelectric power (TEP) of layered chalcogenides GaTe crystals
Subject
:
Physics
Document Language
:
English
Abstract
:
TEP measurements of gallium mono-tellurite single crystals have been studied over the temperature range 193-583 K. GaTe single crystals grown from melt by the modified Bridgman technique method. The results of measurements indicate that the investigated samples turned out to be P-type nature. Investigation of GaTe compound revealed that it has interesting properties. Many physical parameters were determined such as carrier mobilities, effective masses of free charge carriers, diffusion coefficient and diffusion length as well as the relaxation time. The highest value of figure of merit for GaTe permit the practical application as thermoelectric element. © 2008 Springer Science+Business Media, LLC.
ISSN
:
1388-6150
Journal Name
:
Journal of Thermal Analysis and Calorimetry, Volume 94, Issue 2, November 2008, Pages 597-600
Volume
:
94
Issue Number
:
2
Publishing Year
:
2008 AH
2008 AD
Number Of Pages
:
4
Article Type
:
Article
Added Date
:
Thursday, October 15, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
احمد عبدالله سالم آل موسى الغامدي
Al-Ghamdi, A.A
Researcher
Doctorate
AGAMDI@kau.edu.sa
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