Document Details

Document Type : Article In Journal 
Document Title :
P‑Type Cu2O/SnO Bilayer Thin Film Transistors Processed at Low
ترانزستورات الأغشية الرقيقة ثنائية الطبقة المصنوعة من Cu2O/SnO عند درجات حرارة منخفضة
 
Subject : materials science 
Document Language : English 
Abstract : P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 °C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V−1 s−1, 1.5×102, and −5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed 
ISSN : 1944-8244 
Journal Name : ACS Applied Materials & Interfaces 
Volume : 5 
Issue Number : 19 
Publishing Year : 1434 AH
2013 AD 
Article Type : Article 
Added Date : Monday, November 4, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
هالة عبد العزيز الجوهريAljawhari, Hala AbdulazizInvestigatorDoctoratehaljawhari@kau.edu.sa
ألفونسو كارفيو فرسكاسFrescas, Alfonso CaraveoResearcherDoctoratealfanso.caraveo@kaust.edu.sa

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