Document Details

Document Type : Article In Journal 
Document Title :
Zn1-xAlxO:NiO Composite Transparent Conducting Oxide Thin Film/p-Type Silicon Photodiodes
Zn1-xAlxO:NiO Composite Transparent Conducting Oxide Thin Film/p-Type Silicon Photodiodes
 
Subject : physics 
Document Language : English 
Abstract : Zn1-xAlxO:NiO composite transparent conducting oxide thin films were prepared by sol gel method to prepare Zn1-xAlxO:NiO/p-type silicon photodiodes. The structural properties of the films were analyzed by AFM measurements. The diodes were coated on p-type silicon having ohmic contact by sol gel spin coating method. The ideality factor and barrier height values of the diodes were obtained. The photoresponse properties of the diodes were performed under solar light illuminations. It was found that the photocurrent of the diodes is higher than the dark current. This indicates that the diodes exhibited a photodiode behavior. The obtained results indicate that the photoresponse properties of Zn1-xAlxO:NiO composite transparent conducting oxide thin film/p-type silicon photodiodes are controlled by NiO doping 
ISSN : 1555-130X 
Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 
Volume : 10 
Issue Number : 6 
Publishing Year : 1435 AH
2015 AD 
Article Type : Article 
Added Date : Wednesday, August 16, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
RHA RainyRainy, RHA InvestigatorDoctorate 

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