Document Details

Document Type : Thesis 
Document Title :
FABRICATION OF MULTILAYER HIGH- DIELECTRIC THIN FILMS USING DEEP ULTRAVIOLET ANNEALING APPROACH
تكوين أفلام رقيقة عازلة متعددة الطبقات ذات سماحية عالية باستخدام التسخين بواسطة الأشعة البنفسجية عميقة المدى
 
Subject : Faculty of Science 
Document Language : Arabic 
Abstract : Low-temperature fabrication of high-quality sol-gel thin films is becoming an essential requirement to realize the full potential of flexible and printed electronics. Photochemical-activation induced by Deep-Ultraviolet (DUV) light of wavelength 185 nm and 254 nm is neoteric approach that emerged recently to replace the high-temperature conventional annealing processes. This ultra-fast, simple and cost-effective photo-annealing route provide sufficient energy to condense the sol-gel oxide films at significantly lower temperatures. In this dissertation, we study the fabrication of multilayer high- gate dielectrics using solution-processed hafnium oxide (HfO2) and yttrium oxide (Y2O3) thin films with a strategic DUV annealing approach. The performance of the fabricated HfO2/Y2O3 multilayer metal oxide capacitor was investigated according to the number of layers and the route of annealing. Specifically, multilayer dielectrics consisting of 3, 9 and 10 alternating layers were built. For each case, three different conditions of annealing were applied: conventional annealing at 400oC for 60 min, DUV annealing for 60 min, and DUV annealing for 30 min. The electrical and optical properties for each configuration were analyzed to assess the performance of the devices. The electrical properties of the dielectrics were examined by capacitance-voltage (C-V) and current-voltage (I-V) measurements and the optical properties were examined by using (UV-Vis). It was found that the 9 multilayers HfO2/Y2O3 films annealed by DUV for 30 min yielded the lowest leakage current of 7.32×10-9 A/cm2 at an applied voltage of 1V and had a dielectric constant of 8.73 at 100 kHz with average transmittance around 94% and negligible hysteresis. In general, the dielectrics films which annealed at DUV showed the smallest values for both hysteresis and flat-band voltage. This result provides a promising potential in employing the DUV as a low temperature annealing for applications where the thermal budget becomes a crucial necessity. 
Supervisor : Dr. Hala Al-Jawhari 
Thesis Type : Master Thesis 
Publishing Year : 1442 AH
2020 AD 
Co-Supervisor : Dr. Arwa Kutbee 
Added Date : Friday, December 4, 2020 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
شواق محمد الميمونيAl-Maimouni, Ashwag MohammedResearcherMaster 

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